Diffusion of E centers in germanium predicted using GGA1U approach
نویسندگان
چکیده
H. Tahini, A. Chroneos, R. W. Grimes, U. Schwingenschlögl, and H. Bracht Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, United Kingdom PSE Division, KAUST, Thuwal 23955-6900, Saudi Arabia Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, Münster D-48149, Germany
منابع مشابه
Diffusion of E centers in germanium predicted using GGA+U approach
Copyright and Moral Rights for the articles on this site are retained by the individual authors and/or other copyright owners. For more information on Open Research Online's data policy on reuse of materials please consult the policies page.
متن کاملNonlinear stability of E centers in Si1−xGex: Electronic structure calculations
Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms E centers in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E cente...
متن کاملDiffusion of tin in germanium: a GGA+U approach
Related Articles Computational methodology for analysis of the Soret effect in crystals: Application to hydrogen in palladium J. Appl. Phys. 112, 083516 (2012) Spectroscopic analysis of Al and N diffusion in HfO2 J. Appl. Phys. 112, 064118 (2012) Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy Appl. Phys. Lett. 101, 042113 (20...
متن کاملInterstitial-mediated diffusion in germanium under proton irradiation.
We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual depth independent broadening of the Ge isotope multilayer structure. This behavior and the observed enhanced diffusion of B and retarded diffusion of P demonstrates that an interstitial-mediated diffusion process dominate...
متن کاملSimulation of Boron Diffusion in Strained Sil-,Ge, Epitaxial Layers
This paper describes a simple and accurate model for boron diffusion in SiGe that was successfully implemented in TAURUS (PMEI). The comparison of the Si,.,Ge, samples to the Si samples after rapid thermal and furnace annealing revealed a retarded B diffusion inside the strained Sil.,Ge, layers. The influence of the Ge content on the dopant diffusion was also measured and simulated, demonstrati...
متن کامل